Datasheet4U.com - K9MCG08U5M

K9MCG08U5M Datasheet, Samsung Electronics

K9MCG08U5M Datasheet, Samsung Electronics

Page 1 of K9MCG08U5M Page 2 of K9MCG08U5M Page 3 of K9MCG08U5M

K9MCG08U5M memory equivalent

  • flash memory.
  • Preview is limited to up to three pages.

K9MCG08U5M Features and benefits

K9MCG08U5M Features and benefits


* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit
* Automatic Program and Erase .

K9MCG08U5M Application

K9MCG08U5M Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

K9MCG08U5M Description

K9MCG08U5M Description

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-.

Image gallery

Page 1 of K9MCG08U5M Page 2 of K9MCG08U5M Page 3 of K9MCG08U5M

TAGS

K9MCG08U5M
Flash
Memory
Samsung Electronics

Manufacturer


Samsung Electronics

Related datasheet

K9MDG08U5D

K9MDG08U5M

K903

K904

K91G08Q0M

K931

K932

K9351M

K9352M

K9356M

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts